At the same time of independent research and development, the company strengthens the cooperation with enterprises, universities and scientific research institutes, vigorously develops key technologies with independent intellectual property rights, forms independent core technologies and proprietary technologies, and speeds up the pace of industrialization of scientific and technological achievements. The company has established industry university research cooperation relationship with well-known universities such as Xi'an University of Electronic Science and technology, and has mastered a number of core technologies with independent intellectual property rights, which effectively ensures the smooth development of R & D activities of the company, and provides technical reserves and support for the realization of the leading strategy of semiconductor series products technology.
Boost circuit: boost converter, i.e. boost converter, stores energy for L through Q1 conduction. After Q1 is turned off, l releases energy storage and adds input voltage to boost voltage. APFC circuit uses this circuit topology. The reverse recovery of D1 will have a great impact on Q1 and should be considered. The peak value of reverse voltage is higher when MOS transistor is off. Bvdss (600v-650v) is required, MOS transistor is connected with inductive load, and eas capability is required to be high. Under abnormal conditions, the circuit requires high DV / dt resistance of MOS transistor. Energy efficiency requirements, low MOS transistor loss. Lightning surge assessment.
Resonant half bridge power supply is suitable for power supply applications with relatively large capacity and is an ideal choice for applications from 150W to 1000kW. Resonant half bridge power supply has achieved very high efficiency due to the use of zero voltage switching (ZVS). High switching frequency requires low gate charge of MOS products to realize fast switching and reduce switching loss. High operating current requires low RDS (on) design of MOS products to reduce conduction loss; high EMI requirements require high EMI anti-interference capability of MOS products; zero voltage switching requires short reverse recovery time of body diode. J-jet microelectronics also provides mutliepisj-mos with a high-speed fast recovery diode (FRD), and the diode has a short reverse recovery time (TRR), which is suitable for applications where the regeneration current flows through the main diode causing recovery loss.
Flyback converters include a small number of components for power applications below 150 watts, such as laptops and mobile phones. They are ideal for flyback circuits. When MOS is off, the peak voltage of switching node is high. MOS is connected with inductive load, and the requirement of EAS capability is high. Under abnormal conditions, the circuit requires high resistance to DV / dt of MOS transistor. The requirements of energy efficiency and MOS transistor loss are high. Lightning surge assessment. Jiejie microelectronics provides 650V / 700V / 730v MOSFET.
The control method of synchronous rectification is to improve the forward conduction voltage drop loss of diode rectifier by using the ultra-low on resistance of MOS transistor. Our sgtmos can supply 30V ~ 150V synchronous rectification MOS transistor. In the selection of synchronous rectifier MOS transistor, BV, RDSON, QG and qrr can be used as reference to select suitable MOS transistors. We provide sgtmos with high Vth for synchronous rectification applications, and optimize the consistency of Vth, so that the devices are more suitable for parallel use, with smoother load current and stronger short-circuit resistance.
There are two kinds of forward switching power supply in hard switching applications: single transistor forward and double transistor forward. For single transistor forward, as the transformer needs to add additional magnetic reset winding, when the main switch MOS transistor is turned off, the MOS transistor will bear the stress twice as much as the input voltage. Therefore, we recommend high bv MOS transistor to deal with the impact of voltage change. For dual transistor forward, it is a very stable topology with low operating frequency and no excessive impact current. The requirements for MOS transistor are relatively loose. It is usually used with PFC in 200W ~ 800W adapter, industrial power supply, computer power supply or occasions with relatively poor environment and high stability requirements.