At the same time of independent research and development, the company strengthens the cooperation with enterprises, universities and scientific research institutes, vigorously develops key technologies with independent intellectual property rights, forms independent core technologies and proprietary technologies, and speeds up the pace of industrialization of scientific and technological achievements. The company has established industry university research cooperation relationship with well-known universities such as Xi'an University of Electronic Science and technology, and has mastered a number of core technologies with independent intellectual property rights, which effectively ensures the smooth development of R & D activities of the company, and provides technical reserves and support for the realization of the leading strategy of semiconductor series products technology.
1. 1.5KW PFC + LLC (resonant half bridge
Because of the low power, the single PFC + half bridge can satisfy the application, and the circuit is simple and the components are few. MOS is generally 20-50a, 600V, 650V.
2. 3.3kw bridgeless PFC + resonant full bridge
The bridgeless PFC needs 2pcs MOS and 2pcs rectifiers, so there is no need to input rectifier bridge, because there is no input rectifier loss. But EMI is more difficult to deal with. The resonant full bridge needs 4 pcs MOS, and the driving circuit is complex, so it is suitable for high power occasions.
3. 6 ~ 15kw Vienna Three Phase PFC + three level resonant full bridge
The circuit is very complex and needs special drive and control circuit. The advantage is that MOS can be 600650v, which is easy to purchase. Due to the use of multiple MOS, the heat is evenly distributed, and the heat dissipation will be better handled.